Basic Electronic
Autor: chngkailiang • November 1, 2016 • Lab Report • 993 Words (4 Pages) • 723 Views
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UEEA1313 – BASIC ELECTRONICS ASSIGMENT
Date of Submission: 5th August 2016
Lecturer: Dr. KH Yeoh
Student Name | Student ID. No | Course | Year/Semester | Lecture Group |
Ch’ng Kai Liang | 1503759 | MH | Y1S1 | L3 |
Tam Sin Yi | 1504846 | 3E | Y1S1 | L3 |
Soo Shi Jie | 1503888 | MH | Y1S1 | L3 |
Leong Cin Wai | 1601438 | 3E | Y1S1 | L3 |
Contribution
Student Name | Contribution | Agreement Signature |
Ch’ng Kai Liang | Design Steps and Procedures, Multisim Simulation | |
Tam Sin Yi | Design Steps and Procedures, Multisim Simulation | |
Soo Shi Jie | Theoretical Calculation | |
Leong Cin Wai | Introduction |
TABLE OF CONTENTS
CONTRIBUTION ii
TABLE OF CONTENTS
CHAPTER
1 INTRODUCTION 1
1.1 Background 1
1.2 Aims and Objectives 2
2 Design and Circuit 2
3 Conclusion 8
REFERENCES
1.0 INTRODUCTION
Introduction
A Bipolar Junction Transistor or, BJT, is commonly used as an amplifier of voltage in a circuit. A BJT consists of three terminals namely; the base, the emitter and the collector. A BJT is usually made up of silicon or germanium, both with a potential barrier of 0.7V and 0.3V respectively. The structure of a BJT is three layers of semiconductor connected to emitter and collector at either ends with the base terminal connected to the middle semiconductor in the BJT. A BJT can be either NPN or PNP, which is named after the structure of the BJT. For example, an NPN BJT is two n-type semi-conductor material with a p-type semi-conductor material in between. ‘P’ doped junction contains majority holes and ‘N’ doped junction contains majority carriers.
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